In common emitter amplifier the \(\frac{I_{c}}{I_{e}}\) is 0.98.The current gain will be

The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the

In a p-n junction having depletion layer of thickness 10^–6m the potential across it is 0.1 V. The electric field is

In a triode, gm= 2 × 10^–3 ohm^–1; μ = 42; resistance of load, R = 50 kilo ohm. The voltage amplification obtained from this triode will be

A half-wave rectifier is being used to rectify an alternating voltage of frequency 50 Hz. The number of pulses of rectified current obtained in one second is

What is the voltage gain in a common emitter amplifier,where input resistance is 3Ω and load resistance 24 Ω, β= 0.6 ?

The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than 2480 nm is incident on it. The band gap (in eV) for the semiconductor is

The current gain in transistor in common base mode is 0.99. To change the emitter current by 5 mA, the necessary change in collector will be

In a common base amplifier the phase difference between the input signal voltage and the output voltage is

For a common base amplifier, the values of resistance gain and voltage gain are 3000 and 2800 respectively. The current gain will be